Wavelength-tunable Erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth
Refereed conference paper presented and published in conference proceedings

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AbstractWe propose and demonstrate a wavelength-tunable and narrow-linewidth erbium-doped fiber (EDF) laser using silicon-on-insulator (SOI) based micro-ring. We discuss the wavelength selection and wavelength-tunable operation of the proposed fiber laser. The SOI based micro-ring is fabricated on a SOI wafer with a 0.22 um thick top silicon layer and a 2 um thick burial oxide (BOX) layer. In order to enhance the coupling efficiency between the SOI based micro-ring and the EDF, a pair of uniform period grating couplers are used. In the experiment, the lasing wavelengths can be tuned in the wavelengths range from 1532 nm to 1567.2 nm with a tuning step of 2 nm. The wavelength range and the tuning step are determined by the EDFA gain-bandwidth and the FSR of the SOI based micro-ring respectively. The OSNR of each lasing wavelength is > 42 dB. By using a double-ring configuration, a narrow laser linewidth of 50 kHz can be achieved.
All Author(s) ListYang LG, Chow CW, Yeh CH, Tsang HK
Name of ConferenceConference on High-Power, High-Energy, and High-Intensity Laser Technology II
Start Date of Conference14/04/2015
End Date of Conference15/04/2015
Place of ConferencePrague
Country/Region of ConferenceCzech Republic
Journal nameProceedings of SPIE
Detailed descriptionorganized by SPIE,
Volume Number9513
LanguagesEnglish-United Kingdom
Keywordsmicro-ring; optical communication; silicon-on-insulator (SOI)
Web of Science Subject CategoriesEngineering; Engineering, Electrical & Electronic; Optics; Physics; Physics, Applied

Last updated on 2020-02-07 at 02:52