Yield Enhancement for 3D-Stacked Memory by Redundancy Sharing across Dies
Refereed conference paper presented and published in conference proceedings


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AbstractThree-dimensional (3D) memory products are emerging to fulfill the ever-increasing demands of storage capacity. In 3D-stacked memory, redundancy sharing between neighboring vertical memory blocks using short through-silicon vias (TSVs) is a promising solution for yield enhancement. Since different memory dies are with distinct fault bitmaps, how to selectively matching them together to maximize the yield for the bonded 3D-stacked memory is an interesting and relevant problem. In this paper, we present novel solutions to tackle the above problem. Experimental results show that the proposed methodology can significantly increase memory yield when compared to the case that we only bond self-reparable dies together.
All Author(s) ListJiang L, Ye R, Xu QA
Name of ConferenceIEEE and ACM International Conference on Computer-Aided Design
Start Date of Conference07/11/2010
End Date of Conference11/11/2010
Place of ConferenceSan Jose
Country/Region of ConferenceUnited States of America
Detailed descriptionorganized by IEEE/ACM,
Year2010
Month1
Day1
PublisherIEEE
Pages230 - 234
eISBN978-1-4244-8192-7
ISSN1933-7760
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesComputer Science; Computer Science, Theory & Methods; Engineering; Engineering, Electrical & Electronic

Last updated on 2021-19-02 at 23:58