Modeling TSV Open Defects in 3D-Stacked DRAM
Refereed conference paper presented and published in conference proceedings


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AbstractThree-dimensional (3D) stacking using through silicon vias (TSVs) is a promising solution to provide low-latency and high-bandwidth DRAM access from microprocessors. The large number of TSVs implemented in 3D DRAM circuits, however, are prone to open defects and coupling noises, leading to new test challenges. Through extensive simulation studies, this paper models the faulty behavior of TSV open defects occurred on the wordlines and the bitlines of 3D DRAM circuits, which serves as the first step for efficient and effective test and diagnosis solutions for such defects.
All Author(s) ListJiang L, Liu YX, Duan LA, Xie YA, Xu QA
Name of ConferenceInternational Test Conference 2010
Start Date of Conference31/10/2010
End Date of Conference05/11/2010
Place of ConferenceAustin
Country/Region of ConferenceUnited States of America
Detailed descriptionorganized by IEEE,
Year2010
Month1
Day1
PublisherIEEE
eISBN978-1-4244-7205-5
ISSN1089-3539
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesEngineering; Engineering, Electrical & Electronic

Last updated on 2021-19-02 at 23:58