Orientation and Structure Controllable Epitaxial Growth of ZnS Nanowire Arrays on GaAs Substrates
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AbstractSingle-crystalline, well-aligned ZnS nanowire arrays were epitaxially grown on GaAs substrates by metal-organic chemical vapor deposition using Ag and Au nanoparticles as catalysts. Au nanoparticles of different size were used to control the diameter of the nanowires. Under the growth conditions of this study, the arrays were found to align predominantly along the [111]B direction of the substrates, a property which can be utilized to orient the nanowires along chosen directions. Electron microscopy studies of nanowires of different diameters reveal, for the first time, that ZnS nanowires undergo a structural transformation from wurtzite to zinc blende with increasing diameter. The critical diameter is determined to be in the range 30-70 nm, in reasonable agreement with predictions of recent theoretical models. In nanowires whose diameters are near this critical range, a high density of stacking faults is found, consistent with the bistability of the two structures. Good controls of the orientation and structure of nanowire arrays are important for tailoring their properties to satisfy different requirements of potential nanodevices.
All Author(s) ListLiang Y, Xu HY, Hark SK
Journal nameJournal of Physical Chemistry C
Volume Number114
Issue Number18
Pages8343 - 8347
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesChemistry; Chemistry, Physical; CHEMISTRY, PHYSICAL; Materials Science; Materials Science, Multidisciplinary; MATERIALS SCIENCE, MULTIDISCIPLINARY; Nanoscience & Nanotechnology; NANOSCIENCE & NANOTECHNOLOGY; Science & Technology - Other Topics

Last updated on 2021-03-03 at 00:14