High-yield synthesis of In2-xGaxO3(ZnO)(3) nanobelts with a planar superlattice structure
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AbstractHomologous compound In2-xGaxO3(ZnO)(3) (x approximate to 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2-xGaxO3(ZnO)(3) (x approximate to 0.18) with lattice constants a = 0.335 nm and c = 4.24 +/- 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In-O layers and In1-xGax/Zn-O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface.
All Author(s) ListWu LL, Liu FW, Chu ZQ, Liang Y, Xu HY, Lu HQ, Zhang XT, Li QA, Hark SK
Journal nameCrystEngComm
Volume Number12
Issue Number7
Pages2047 - 2050
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesChemistry; Chemistry, Multidisciplinary; CHEMISTRY, MULTIDISCIPLINARY; Crystallography; CRYSTALLOGRAPHY

Last updated on 2021-10-01 at 00:27