High-yield synthesis of In2-xGaxO3(ZnO)(3) nanobelts with a planar superlattice structure
Publication in refereed journal


Times Cited
Web of Science18WOS source URL (as at 09/01/2021) Click here for the latest count
Altmetrics Information
.

Other information
AbstractHomologous compound In2-xGaxO3(ZnO)(3) (x approximate to 0.18) nanobelts were successfully synthesized in high yield by a simple thermal vapour method for the first time. Two sets of peaks appear in X-ray diffraction pattern. One is attributed to wurtzite ZnO, while the other is indexed to rhombohedral In2-xGaxO3(ZnO)(3) (x approximate to 0.18) with lattice constants a = 0.335 nm and c = 4.24 +/- 0.01 nm within experimental errors. Cross-section high-resolution transmission electron microscopy observations and XRD data confirmed the formation of a planar superlattice structure in the nanobelts, which consists of alternate stacking of In-O layers and In1-xGax/Zn-O blocks along the [0001] direction, which is normal to the growth direction, leading to the (0001) plane as a surface.
All Author(s) ListWu LL, Liu FW, Chu ZQ, Liang Y, Xu HY, Lu HQ, Zhang XT, Li QA, Hark SK
Journal nameCrystEngComm
Year2010
Month1
Day1
Volume Number12
Issue Number7
PublisherROYAL SOC CHEMISTRY
Pages2047 - 2050
ISSN1466-8033
LanguagesEnglish-United Kingdom
Web of Science Subject CategoriesChemistry; Chemistry, Multidisciplinary; CHEMISTRY, MULTIDISCIPLINARY; Crystallography; CRYSTALLOGRAPHY

Last updated on 2021-10-01 at 00:27