Effect of substrate doping concentration on quantum well states of Pb island grown on Si(111)
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AbstractThe interaction between the metallic film/island and the semiconductor substrate is important to the electronic properties of metallic nanostructure grown on semiconductor substrate. Here, we report a series of comparison experiments to investigate the effect of doping concentration of Si substrates on the quantum well state (QWS). Using scanning tunneling microscopy, we observed that the apparent QWS energy positions show a strong dependence on the substrate used and on the sample temperature. Further experimental results by varying the height of scanning tunneling microscope tip over the Pb island uncovered that the observed apparent QWS energy position changes mainly come from the partial bias voltage drop on the combined resistance of the Pb wetting layer and the substrate, which is comparable with the vacuum tunneling resistance at low temperatures. (C) 2009 Elsevier B.V. All rights reserved.
All Author(s) ListZhang XQ, Liu JP, Li BK, Wang KD, Ming FF, Wang JN, Xiao XD
Journal nameSurface Science
Year2010
Month1
Day15
Volume Number604
Issue Number2
PublisherELSEVIER SCIENCE BV
Pages175 - 180
ISSN0039-6028
eISSN1879-2758
LanguagesEnglish-United Kingdom
KeywordsLead; Metal-semiconductor interfaces; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Silicon
Web of Science Subject CategoriesChemistry; Chemistry, Physical; CHEMISTRY, PHYSICAL; Physics; Physics, Condensed Matter; PHYSICS, CONDENSED MATTER

Last updated on 2021-25-01 at 23:10