A brief review of formation energies calculation of surfaces and edges in semiconductors
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AbstractTo have a high quality experimental growth of crystals, understanding the equilibrium crystal shape (ECS) in different thermodynamic growth conditions is important. The factor governing the ECS is usually the absolute surface formation energies for surfaces (or edges in 2D) in different orientations. Therefore, it is necessary to obtain an accurate value of these energies in order to give a good explanation for the observation in growth experiment. Historically, there have been different approaches proposed to solve this problem. This paper is going to review these representative literatures and discuss the pitfalls and advantages of different methods.
All Author(s) ListSin CK, Zhang JZ, Tse KF, Zhu JY
Journal nameJournal of Semiconductors
Volume Number41
Issue Number6
PublisherIOP Publishing
Article number061101
LanguagesEnglish-United Kingdom
Keywordssurface, first principle, morphology
Web of Science Subject CategoriesPhysics, Condensed Matter;Physics

Last updated on 2021-22-09 at 01:09