An Experimental Demonstration of 160-Gbit/s PAM-4 Using a Silicon Micro-Ring Modulator
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AbstractSilicon photonics has been regarded as a promising technology for future small-footprint, low-cost and low-power 400-Gbit/s datacenter interconnects (DCIs). In this work, for the first time, we report an experimental demonstration of a single-wavelength, single-polarization 160-Gbit/s four-level pulse-amplitude modulation (PAM-4) employing a single integrated silicon carrier-depletion micro-ring modulator (MRM). The measured bit-error rates (BERs) for the back-to-back (BTB) and after 1-km standard single-mode fiber (SSMF) transmission are 1.36E-3 and 2.12E-3, respectively, all below the hard-decision forward error correction (HD-FEC) coding limit with 7% overhead. A data rate of up to 170 Gbit/s with a BER lower than the HD-FEC limit is demonstrated for the BTB transmission.
Acceptance Date16/12/2019
All Author(s) ListTong YY, Hu ZY, Wu XR, Liu ST, Chang L, Netherton A, Chan CK, Bowers JE, Tsang HK
Journal nameIEEE Photonics Technology Letters
Year2020
Month1
Volume Number32
Issue Number2
PublisherInstitute of Electrical and Electronics Engineers
Pages125 - 128
ISSN1041-1135
eISSN1941-0174
LanguagesEnglish-United Kingdom
KeywordsDatacenter interconnects, silicon photonics, micro-ring modulator, short-reach communication
Web of Science Subject CategoriesEngineering, Electrical & Electronic;Optics;Physics, Applied;Engineering;Optics;Physics

Last updated on 2021-14-09 at 23:57