Bufferless III-V photodetectors directly grown on (001) silicon-on-insulators
Publication in refereed journal

香港中文大學研究人員

引用次數
Scopus ( 17/10/2020)
替代計量分析
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其它資訊
摘要Efficient photodetectors (PDs) and lasers are critical components in silicon photonics technology. Here, we demonstrate bufferless InP/InGaAs PDs, directly grown on (001) silicon-on-insulators. The nano-scale PDs exhibit a high photoresponsivity of 1.06 A/W at 1.55 µm, and a wide operating range from 1450 nm to 1650 nm. The bufferless feature of nano-PDs facilitates effective interfacing with Si waveguides, thus paving the path toward fully integrated silicon photonics circuits.
出版社接受日期21.02.2020
著者Xue Y, Han Y, Wang Y, Zhang ZY, Tsang HK, Lau KM
期刊名稱Optics Letters
出版年份2020
月份4
卷號45
期次7
出版社Optical Society of America
頁次1754 - 1757
國際標準期刊號0146-9592
電子國際標準期刊號1539-4794
語言英式英語
關鍵詞Silicon photonics, hybrid integration, photodetectors
Web of Science 學科類別Optics;Optics

上次更新時間 2020-17-10 於 23:20