Structure defects promoted exciton dissociation and carrier separation for enhancing photocatalytic hydrogen evolution
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摘要Structure defect poor and rich graphitic carbon nitrides (g-C3N4) were successfully prepared to disclose the relationships between structure defects and the exciton/carrier behaviors. The partial loss of the heptazine units in the matrix was the origin of the intrinsic structure defects in the g-C3N4, evidenced by the X-ray photoelectron spectroscopic analysis. Both the fluorescence and ultrafast transient absorption analyses demonstrated that the presence of the intrinsic structure defects within g-C3N4 promoted the dissociation of excitons and the separation of photogenerated carriers, reflected by the accelerated relaxation of the excited electrons from conduction band to the trap states and the prolonged relaxation of trapped electrons to the valence band. Thus, the structure defect rich g-C3N4 performed better in photocatalytic hydrogen production than structure defect poor g-C3N4. This study not only disclosed the influences of the intrinsic structure defects on exciton/carrier behaviors, but also provide an alternative perspective to modify the semiconductors for photocatalytic applications.
著者Hongli Sun, Kang Wei, Dan Wu, Zhifeng Jiang, Hui Zhao, Tianqi Wang, Qun Zhang, Po Keung Wong
期刊名稱Applied Catalysis B: Environmental
出版年份2020
月份5
日期5
卷號264
出版社Elsevier
出版地New York
文章號碼118480
國際標準期刊號0926-3373
電子國際標準期刊號1873-3883
語言美式英語
關鍵詞Graphitic carbon nitride, Structure defects, Exciton dissociation, Carrier separation

上次更新時間 2020-09-08 於 02:08